In-situ Switching of a Ferroelectric Film Through a Non-ferroelectric Layer and Direct Scanning Probe Analysis of the Same Cross Section
نویسندگان
چکیده
Ferroelectric oxides are of continuing interest in a new generation of electronic devices, such as piezoelectric actuators and nonvolatile memory devices. In general, their application involves manipulation of the polarization of the ferroelectric and the polarization depends sensitively on boundaries and interfaces. Here we study the dynamic interaction during polarization switching of domains with a thin STO layer of a complex film stack composed of ferroelectric, followed by a very thin non-ferroelectric STO layer, and a second ferroelectric layer.
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